Strain-engineered MOSFETs / C.K. Maiti, T.K. Maiti.
Material type: TextPublisher: Boca Raton, FL : Taylor and Francis, [2013]Copyright date: ©2013Description: 1 online resourceContent type:- text
- computer
- online resource
- 9781466503472
- 1466503475
- Metal oxide semiconductor field-effect transistors -- Reliability
- Integrated circuits -- Fault tolerance
- Strains and stresses
- TECHNOLOGY & ENGINEERING -- Electronics -- Circuits -- General
- TECHNOLOGY & ENGINEERING -- Electronics -- Microelectronics
- TECHNOLOGY & ENGINEERING -- Material Science
- TECHNOLOGY & ENGINEERING -- Electronics -- Transistors
- Integrated circuits -- Fault tolerance
- Strains and stresses
- 621.3815/284 23
- TK7871.99.M44 M248 2012eb
- TEC008010 | TEC008070 | TEC021000
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- Provided by publisher.
Includes bibliographical references and index.
Print version record.
1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions.
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