Strain-engineered MOSFETs / (Record no. 3860)

MARC details
000 -LEADER
fixed length control field 02287cam a2200337Ii 4500
001 - CONTROL NUMBER
control field 9781315216577
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 180706s2013 fluad ob 001 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781315216577
Qualifying information (e-book : PDF)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9781138075603
Qualifying information (paperback)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9781466500556
Qualifying information (hardback)
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1201/9781315216577
Source of number or code doi
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)824803419
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7871.99.M44
Item number M248 2013
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815284
Item number M232
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Maiti, C. K.,
Relator term author.
9 (RLIN) 4798
245 10 - TITLE STATEMENT
Title Strain-engineered MOSFETs /
Statement of responsibility, etc. .K. Maiti, T.K. Maiti.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Boca Raton, Fla. :
Name of producer, publisher, distributor, manufacturer CRC Press,
Date of production, publication, distribution, manufacture, or copyright notice 2013.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (xix, 300 pages)
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term unmediated
Media type code n
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term volume
Carrier type code nc
Source rdacarrier
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note 1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions.
520 ## - SUMMARY, ETC.
Summary, etc. "This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--
Assigning source Provided by publisher.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Integrated circuits
General subdivision Fault tolerance.
9 (RLIN) 4800
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Metal oxide semiconductor field-effect transistors
General subdivision Reliability.
9 (RLIN) 4799
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Strains and stresses.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Maiti, T. K.
9 (RLIN) 4806
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Print version:
International Standard Book Number 9781466500556
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://www.taylorfrancis.com/books/9781466503472">https://www.taylorfrancis.com/books/9781466503472</a>
Public note Taylor&Francis Host.
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type E-books

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